DMN2011UFDE-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 11.7A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.26 грн |
| 6000+ | 13.51 грн |
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Технічний опис DMN2011UFDE-7 Diodes Incorporated
Description: MOSFET N-CH 20V 11.7A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: U-DFN2020-6 (Type E), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 610mW (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN2011UFDE-7 за ціною від 17.65 грн до 86.15 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DMN2011UFDE-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 11.7A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V |
на замовлення 107118 шт: термін постачання 21-31 дні (днів) |
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DMN2011UFDE-7 | Diodes Incorporated |
MOSFETs 20V N-Ch Enh Mode 12Vgss 80A .61W |
на замовлення 73086 шт: термін постачання 21-30 дні (днів) |
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| DMN2011UFDE-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 11.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
Description: MOSFET N-CH 20V 11.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
на замовлення 107118 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.72 грн |
| 10+ | 36.57 грн |
| 100+ | 24.06 грн |
| 500+ | 19.72 грн |
| 1000+ | 17.73 грн |
| DMN2011UFDE-7 |
![]() |
Виробник: Diodes Incorporated
MOSFETs 20V N-Ch Enh Mode 12Vgss 80A .61W
MOSFETs 20V N-Ch Enh Mode 12Vgss 80A .61W
на замовлення 73086 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.15 грн |
| 10+ | 48.77 грн |
| 100+ | 30.10 грн |
| 500+ | 24.68 грн |
| 1000+ | 22.36 грн |
| 3000+ | 17.65 грн |



