DMN2011UFX-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис DMN2011UFX-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN, Part Status: Active, Supplier Device Package: V-DFN2050-4, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 4-VFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції DMN2011UFX-7 за ціною від 17.30 грн до 85.45 грн
| Фото | Назва | Виробник | Інформація |
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DMN2011UFX-7 | Diodes Incorporated |
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF |
на замовлення 5919 шт: термін постачання 21-30 дні (днів) |
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DMN2011UFX-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 12.2A 4VDFN Mounting Type: Surface Mount Package / Case: 4-VFDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: V-DFN2050-4 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 2.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain |
на замовлення 4797 шт: термін постачання 21-31 дні (днів) |
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| DMN2011UFX-7 |
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Виробник: Diodes Incorporated
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
на замовлення 5919 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 69.82 грн |
| 10+ | 46.42 грн |
| 100+ | 27.99 грн |
| 500+ | 24.40 грн |
| 1000+ | 21.24 грн |
| 3000+ | 17.30 грн |
| DMN2011UFX-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN2050-4
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
на замовлення 4797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 85.45 грн |
| 10+ | 51.73 грн |
| 100+ | 34.10 грн |
| 500+ | 24.90 грн |
| 1000+ | 22.61 грн |