DMN2011UFX-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN2050-4
Part Status: Active
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Технічний опис DMN2011UFX-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN, Packaging: Tape & Reel (TR), Package / Case: 4-VFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: V-DFN2050-4, Part Status: Active.
Інші пропозиції DMN2011UFX-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DMN2011UFX-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 12.2A 4VDFN Packaging: Cut Tape (CT) Package / Case: 4-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN2050-4 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMN2011UFX-7 | Diodes Incorporated |
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. |
| DMN2011UFX-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Power dissipation: 2.1W Gate charge: 56nC Polarisation: unipolar Drain current: 9.8A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape Case: V-DFN2050-4 On-state resistance: 13mΩ Pulsed drain current: 80A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| DMN2011UFX-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Packaging: Cut Tape (CT)
Package / Case: 4-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN2050-4
Part Status: Active
Description: MOSFET 2N-CH 20V 12.2A 4VDFN
Packaging: Cut Tape (CT)
Package / Case: 4-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: V-DFN2050-4
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DMN2011UFX-7 |
|
Виробник: Diodes Incorporated
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| DMN2011UFX-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W
Mounting: SMD
Power dissipation: 2.1W
Gate charge: 56nC
Polarisation: unipolar
Drain current: 9.8A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Case: V-DFN2050-4
On-state resistance: 13mΩ
Pulsed drain current: 80A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.