DMN2014LHAB-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
| Кількість | Ціна |
|---|---|
| 6+ | 57.35 грн |
| 10+ | 34.27 грн |
| 100+ | 22.13 грн |
| 500+ | 15.87 грн |
| 1000+ | 14.28 грн |
| 2000+ | 12.95 грн |
| 5000+ | 11.32 грн |
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Технічний опис DMN2014LHAB-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Інші пропозиції DMN2014LHAB-13
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DMN2014LHAB-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
товару немає в наявності |
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| DMN2014LHAB-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2030-6 T&R 10K |
товару немає в наявності |