DMN2015UFDE-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 12.65 грн |
| 6000+ | 11.27 грн |
| 9000+ | 10.80 грн |
| 15000+ | 10.03 грн |
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Технічний опис DMN2015UFDE-7 Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: U-DFN2020-6 (Type E), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 660mW (Ta), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN2015UFDE-7 за ціною від 11.10 грн до 58.13 грн
| Фото | Назва | Виробник | Інформація |
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DMN2015UFDE-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 10.5A 6UDFN Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 660mW (Ta) |
на замовлення 138015 шт: термін постачання 21-31 дні (днів) |
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DMN2015UFDE-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K |
на замовлення 2385 шт: термін постачання 21-30 дні (днів) |
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DMN2015UFDE-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 10.5A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 140960 шт: термін постачання 21-31 дні (днів) |
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