DMN2015UFDE-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.47 грн |
| 6000+ | 11.12 грн |
| 9000+ | 10.66 грн |
| 15000+ | 9.89 грн |
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Технічний опис DMN2015UFDE-7 Diodes Incorporated
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 10.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.1V, euEccn: NLR, Verlustleistung: 660mW, Bauform - Transistor: U-DFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 9300µohm, SVHC: No SVHC (27-Jun-2024).
Інші пропозиції DMN2015UFDE-7 за ціною від 14.38 грн до 57.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMN2015UFDE-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 10.5A 6UDFN Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 660mW (Ta) |
на замовлення 138015 шт: термін постачання 21-31 дні (днів) |
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DMN2015UFDE-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 10.5A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 140960 шт: термін постачання 21-31 дні (днів) |
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DMN2015UFDE-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K |
на замовлення 2385 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMN2015UFDE-7 | DIODES INC. |
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 10.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 9300µohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMN2015UFDE-7 | DIODES INC. |
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 10.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 9300µohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| DMN2015UFDE-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Description: MOSFET N-CH 20V 10.5A 6UDFN
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
на замовлення 138015 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.39 грн |
| 11+ | 28.06 грн |
| DMN2015UFDE-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 10.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 140960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.34 грн |
| 10+ | 34.47 грн |
| 100+ | 22.28 грн |
| 500+ | 15.97 грн |
| 1000+ | 14.38 грн |
| DMN2015UFDE-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
на замовлення 2385 шт:
термін постачання 21-30 дні (днів)
| DMN2015UFDE-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.1V
euEccn: NLR
Verlustleistung: 660mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 9300µohm
SVHC: No SVHC (27-Jun-2024)
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.1V
euEccn: NLR
Verlustleistung: 660mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 9300µohm
SVHC: No SVHC (27-Jun-2024)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| DMN2015UFDE-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.1V
euEccn: NLR
Verlustleistung: 660mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 9300µohm
SVHC: No SVHC (27-Jun-2024)
Description: DIODES INC. - DMN2015UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 10.5 A, 9300 µohm, U-DFN2020, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.1V
euEccn: NLR
Verlustleistung: 660mW
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 9300µohm
SVHC: No SVHC (27-Jun-2024)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)