DMN2016UFX-7 Diodes Incorporated

Description: MOSFET 2N-CH 24V 9.9A 4VDFN, Supplier Device Package: V-DFN2050-4, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), Drain to Source Voltage (Vdss): 24V, Power - Max: 1.07W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 4-VFDFN Exposed Pad, Packaging: Tape & Reel (TR).