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Технічний опис DMN2020UFCL-7 Diodes Zetex
Description: MOSFET N-CH 20V 9A X1-DFN1616-6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V, Power Dissipation (Max): 610mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: X1-DFN1616-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V.
Інші пропозиції DMN2020UFCL-7 за ціною від 7.40 грн до 42.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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DMN2020UFCL-7 | Diodes Incorporated |
 Description: MOSFET N-CH 20V 9A X1-DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V |
на замовлення 1146000 шт: термін постачання 21-31 дні (днів) |
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DMN2020UFCL-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 9A X1-DFN1616-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: X1-DFN1616-6 (Type E) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 610mW (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUFDFN |
на замовлення 1148299 шт: термін постачання 21-31 дні (днів) |
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DMN2020UFCL-7 | Diodes Incorporated |
MOSFETs 20V N-Ch Enh FET 0.61W 1788pF 21.5nC |
на замовлення 6716 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN2020UFCL-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
на замовлення 1146000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.15 грн |
| 6000+ | 9.52 грн |
| 9000+ | 8.65 грн |
| 15000+ | 8.09 грн |
| 21000+ | 7.80 грн |
| 30000+ | 7.67 грн |
| 75000+ | 7.40 грн |
| DMN2020UFCL-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1616-6 (Type E)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1616-6 (Type E)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
на замовлення 1148299 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.34 грн |
| 12+ | 26.54 грн |
| 100+ | 18.08 грн |
| 500+ | 12.86 грн |
| 1000+ | 11.54 грн |
| DMN2020UFCL-7 |
|
Виробник: Diodes Incorporated
MOSFETs 20V N-Ch Enh FET 0.61W 1788pF 21.5nC
MOSFETs 20V N-Ch Enh FET 0.61W 1788pF 21.5nC
на замовлення 6716 шт:
термін постачання 21-30 дні (днів)