DMN2022UFDF-13 Diodes Incorporated

Description: MOSFET N-CH 20V 7.9A 6UDFN, Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 660mW (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), FET Type: N-Channel.