DMN2022UNS-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerDI3333-8 (Type UXB)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
| Кількість | Ціна |
|---|---|
| 2000+ | 16.79 грн |
| 6000+ | 15.32 грн |
| 10000+ | 14.18 грн |
| 50000+ | 13.18 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN2022UNS-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Supplier Device Package: PowerDI3333-8 (Type UXB), Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V.
Інші пропозиції DMN2022UNS-7 за ціною від 17.04 грн до 44.31 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN2022UNS-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333 Supplier Device Package: PowerDI3333-8 (Type UXB) Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
|
| DMN2022UNS-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Supplier Device Package: PowerDI3333-8 (Type UXB)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Supplier Device Package: PowerDI3333-8 (Type UXB)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.31 грн |
| 10+ | 36.87 грн |
| 100+ | 25.53 грн |
| 500+ | 20.02 грн |
| 1000+ | 17.04 грн |