DMN2028UVT-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
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Технічний опис DMN2028UVT-7 Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V.
Інші пропозиції DMN2028UVT-7 за ціною від 8.88 грн до 37.20 грн
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DMN2028UVT-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 6.2A TSOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V |
на замовлення 3057 шт: термін постачання 21-31 дні (днів) |
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DMN2028UVT-7 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 20Vdss 8Vgss 40A |
на замовлення 1053 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN2028UVT-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
на замовлення 3057 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 14+ | 22.01 грн |
| 100+ | 14.04 грн |
| 500+ | 9.93 грн |
| 1000+ | 8.88 грн |
| DMN2028UVT-7 |
|
Виробник: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 20Vdss 8Vgss 40A
MOSFETs N-Ch Enh Mode FET 20Vdss 8Vgss 40A
на замовлення 1053 шт:
термін постачання 21-30 дні (днів)