DMN2040LTS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 10.54 грн |
| 5000+ | 9.72 грн |
| 7500+ | 9.68 грн |
| 12500+ | 8.57 грн |
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Технічний опис DMN2040LTS-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 890mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V, Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-TSSOP, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN2040LTS-13 за ціною від 12.41 грн до 50.37 грн
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DMN2040LTS-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 890mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-TSSOP Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14774 шт: термін постачання 21-31 дні (днів) |
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DMN2040LTS-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET DUAL N-CHAN |
на замовлення 5734 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN2040LTS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 6.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 890mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14774 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.37 грн |
| 10+ | 30.07 грн |
| 100+ | 19.33 грн |
| 500+ | 13.81 грн |
| 1000+ | 12.41 грн |
| DMN2040LTS-13 |
|
Виробник: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET DUAL N-CHAN
MOSFETs ENHANCE MODE MOSFET DUAL N-CHAN
на замовлення 5734 шт:
термін постачання 21-30 дні (днів)