DMN2041UVT-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 5.8A TSOT26, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 900mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).