Інші пропозиції DMN2050L-7 за ціною від 5.98 грн до 45.13 грн
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Доступність |
Ціна |
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DMN2050L-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 5.9A SOT23-3Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Part Status: Active |
на замовлення 5703000 шт: термін постачання 21-31 дні (днів) |
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DMN2050L-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 5.9A SOT23-3Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V |
на замовлення 5704985 шт: термін постачання 21-31 дні (днів) |
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DMN2050L-7 | Diodes Incorporated |
MOSFETs 1.4W 20V |
на замовлення 8517 шт: термін постачання 21-30 дні (днів) |
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| DMN2050L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 5.9A SOT23-3
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Part Status: Active
Description: MOSFET N-CH 20V 5.9A SOT23-3
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Part Status: Active
на замовлення 5703000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.06 грн |
| 6000+ | 7.95 грн |
| 9000+ | 7.56 грн |
| 15000+ | 6.69 грн |
| 21000+ | 6.44 грн |
| 30000+ | 6.21 грн |
| 75000+ | 5.98 грн |
| DMN2050L-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 5.9A SOT23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Description: MOSFET N-CH 20V 5.9A SOT23-3
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
на замовлення 5704985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 41.14 грн |
| 13+ | 24.38 грн |
| 100+ | 15.61 грн |
| 500+ | 11.06 грн |
| 1000+ | 9.91 грн |
| DMN2050L-7 |
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Виробник: Diodes Incorporated
MOSFETs 1.4W 20V
MOSFETs 1.4W 20V
на замовлення 8517 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.13 грн |
| 12+ | 27.58 грн |
| 100+ | 15.33 грн |
| 500+ | 11.60 грн |
| 1000+ | 10.41 грн |
| 3000+ | 8.86 грн |




