DMN2050LFDB-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.94 грн |
| 12+ | 26.71 грн |
| 100+ | 17.17 грн |
| 500+ | 12.22 грн |
| 1000+ | 10.97 грн |
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Технічний опис DMN2050LFDB-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.3A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 730mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Інші пропозиції DMN2050LFDB-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DMN2050LFDB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 3.3A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 730mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
 |
DMN2050LFDB-7 | Diodes Incorporated |
MOSFETs DUAL N-CH EH MODE 20V 45mOhm 4.5A |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN2050LFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Power dissipation: 0.73W Case: U-DFN2020-6 On-state resistance: 55mΩ Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±12V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN2050LFDB-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.3A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2N-CH 20V 3.3A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN2050LFDB-7 |
|
Виробник: Diodes Incorporated
MOSFETs DUAL N-CH EH MODE 20V 45mOhm 4.5A
MOSFETs DUAL N-CH EH MODE 20V 45mOhm 4.5A
товару немає в наявності
В кошику
од. на суму грн.
| DMN2050LFDB-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.73W
Case: U-DFN2020-6
On-state resistance: 55mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.73W
Case: U-DFN2020-6
On-state resistance: 55mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.