DMN2080UCB4-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3A X2-WLB0606-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
Power Dissipation (Max): 710mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-WLB0606-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.67 грн |
| 6000+ | 7.61 грн |
| 9000+ | 7.24 грн |
| 15000+ | 6.40 грн |
| 21000+ | 6.17 грн |
| 30000+ | 5.94 грн |
| 75000+ | 5.73 грн |
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Технічний опис DMN2080UCB4-7 Diodes Incorporated
Description: MOSFET N-CH 20V 3A X2-WLB0606-4, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V, Power Dissipation (Max): 710mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-WLB0606-4, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V.
Інші пропозиції DMN2080UCB4-7 за ціною від 9.48 грн до 39.52 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMN2080UCB4-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 3A X2-WLB0606-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V Power Dissipation (Max): 710mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-WLB0606-4 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
на замовлення 168052 шт: термін постачання 21-31 дні (днів) |
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DMN2080UCB4-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
на замовлення 1559 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN2080UCB4-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3A X2-WLB0606-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
Power Dissipation (Max): 710mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-WLB0606-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Description: MOSFET N-CH 20V 3A X2-WLB0606-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
Power Dissipation (Max): 710mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-WLB0606-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
на замовлення 168052 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.52 грн |
| 13+ | 23.36 грн |
| 100+ | 14.94 грн |
| 500+ | 10.59 грн |
| 1000+ | 9.48 грн |
| DMN2080UCB4-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
на замовлення 1559 шт:
термін постачання 21-30 дні (днів)