Технічний опис DMN2230UQ-13 Diodes Inc
Description: MOSFET N-CH 20V 2A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V.
Інші пропозиції DMN2230UQ-13
| Фото | Назва | Виробник | Інформація |
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| DMN2230UQ-13 | Виробник : DIODES INCORPORATED | DMN2230UQ-13 SMD N channel transistors |
товару немає в наявності |
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DMN2230UQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V |
товару немає в наявності |
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DMN2230UQ-13 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: |
товару немає в наявності |