DMN2230UQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 2A SOT23
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Відгуки про товар
Написати відгук
Технічний опис DMN2230UQ-13 Diodes Incorporated
Description: MOSFET N-CH 20V 2A SOT23, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 600mW (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel.
Інші пропозиції DMN2230UQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMN2230UQ-13 | Diodes Incorporated |
 MOSFETs MOSFET BVDSS: |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMN2230UQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Pulsed drain current: 7A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.23Ω Mounting: SMD Gate charge: 2.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN2230UQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS:
MOSFETs MOSFET BVDSS:
товару немає в наявності
В кошику
од. на суму грн.
| DMN2230UQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 7A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 7A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.