DMN2250UFB-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1.35A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V
| Кількість | Ціна |
|---|---|
| 10000+ | 4.33 грн |
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Технічний опис DMN2250UFB-7B Diodes Incorporated
Description: MOSFET N-CH 20V 1.35A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V.
Інші пропозиції DMN2250UFB-7B за ціною від 3.07 грн до 25.10 грн
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DMN2250UFB-7B | Виробник : Diodes Incorporated |
MOSFETs N-CH MOSFET 20V |
на замовлення 54714 шт: термін постачання 21-30 дні (днів) |
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DMN2250UFB-7B | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 1.35A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 16 V |
на замовлення 17770 шт: термін постачання 21-31 дні (днів) |
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