DMN2300UFB-7B Diodes Incorporated

Description: MOSFET N-CH 20V 1.32A 3DFN, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 468mW (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta), FET Type: N-Channel.