DMN2300UFL4-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.39W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 9.60 грн |
| 6000+ | 8.44 грн |
| 9000+ | 8.03 грн |
| 15000+ | 7.11 грн |
| 21000+ | 6.85 грн |
| 30000+ | 6.60 грн |
| 75000+ | 6.44 грн |
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Технічний опис DMN2300UFL4-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.39W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V, Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN1310-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN2300UFL4-7 за ціною від 7.33 грн до 43.21 грн
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DMN2300UFL4-7 | Виробник : Diodes Incorporated |
MOSFETs 20V Dual N-Ch Enh 200mOhm 8V VGSS |
на замовлення 5740 шт: термін постачання 21-30 дні (днів) |
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DMN2300UFL4-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 2.11A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.39W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1310-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 154706 шт: термін постачання 21-31 дні (днів) |
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