Технічний опис DMN2300UFL4Q-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN, Supplier Device Package: X2-DFN1310-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V, Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 530mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції DMN2300UFL4Q-7 за ціною від 6.34 грн до 9.49 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN2300UFL4Q-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 2.11A 6DFNSupplier Device Package: X2-DFN1310-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 530mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
|
| DMN2300UFL4Q-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Supplier Device Package: X2-DFN1310-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Supplier Device Package: X2-DFN1310-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.49 грн |
| 6000+ | 8.35 грн |
| 9000+ | 7.94 грн |
| 15000+ | 7.02 грн |
| 21000+ | 6.77 грн |
| 30000+ | 6.52 грн |
| 75000+ | 6.34 грн |