DMN2310UFB4-7B Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: X2-DFN1006-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 710mW (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).