DMN2310UT-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 10000+ | 4.06 грн |
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Технічний опис DMN2310UT-13 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V, Power Dissipation (Max): 290mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V.
Інші пропозиції DMN2310UT-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN2310UT-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V 24V SOT523 T&R 10K |
товару немає в наявності |
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| DMN2310UT-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 490mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Power dissipation: 490mW Case: SOT523 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 0.7nC |
товару немає в наявності |