DMN2310UWQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис DMN2310UWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V, Power Dissipation (Max): 450mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMN2310UWQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN2310UWQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
DMN2310UWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.1A Pulsed drain current: 4.4A Power dissipation: 0.55W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 0.7nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN2310UWQ-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K
товару немає в наявності
В кошику
од. на суму грн.
| DMN2310UWQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.