Технічний опис DMN2310UWQ-7 Diodes Inc
Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V, Power Dissipation (Max): 450mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMN2310UWQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMN2310UWQ-7 | Виробник : Diodes Zetex |
 20V N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
товару немає в наявності |
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DMN2310UWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Drain current: 1.1A On-state resistance: 0.38Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.55W Polarisation: unipolar Gate charge: 0.7nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 4.4A кількість в упаковці: 10 шт |
товару немає в наявності |
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DMN2310UWQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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| DMN2310UWQ-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K |
товару немає в наявності |
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DMN2310UWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: 20V Drain current: 1.1A On-state resistance: 0.38Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.55W Polarisation: unipolar Gate charge: 0.7nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 4.4A |
товару немає в наявності |