DMN2400UFB4-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 750MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
| Кількість | Ціна |
|---|---|
| 3000+ | 3.90 грн |
| 6000+ | 3.37 грн |
| 9000+ | 3.18 грн |
| 15000+ | 2.78 грн |
| 21000+ | 2.66 грн |
| 30000+ | 2.54 грн |
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Технічний опис DMN2400UFB4-7 Diodes Incorporated
Description: MOSFET N-CH 20V 750MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V.
Інші пропозиції DMN2400UFB4-7 за ціною від 2.51 грн до 19.61 грн
| Фото | Назва | Виробник | Інформація |
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DMN2400UFB4-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET N-CHANNEL DFN DFN1006-H43 GREEN 3K |
на замовлення 9009 шт: термін постачання 21-30 дні (днів) |
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DMN2400UFB4-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 750MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X2-DFN1006-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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