DMN2450UFB4-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
Description: MOSFET N-CH 20V 1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
14+ | 21.17 грн |
21+ | 13.92 грн |
100+ | 6.8 грн |
500+ | 5.32 грн |
1000+ | 3.7 грн |
2000+ | 3.21 грн |
5000+ | 2.92 грн |
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Технічний опис DMN2450UFB4-7B Diodes Incorporated
Description: MOSFET N-CH 20V 1A X2-DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V.
Інші пропозиції DMN2450UFB4-7B за ціною від 1.96 грн до 22.68 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMN2450UFB4-7B | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 10K |
на замовлення 22088 шт: термін постачання 21-30 дні (днів) |
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DMN2450UFB4-7B | Виробник : Diodes Inc | Trans MOSFET N-CH 20V 1A 3-Pin X2-DFN T/R |
товар відсутній |
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DMN2450UFB4-7B | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Mounting: SMD On-state resistance: 0.7Ω Type of transistor: N-MOSFET Case: X2-DFN1006-3 Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Drain-source voltage: 20V Drain current: 0.8A кількість в упаковці: 10000 шт |
товар відсутній |
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DMN2450UFB4-7B | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 1A X2-DFN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V |
товар відсутній |
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DMN2450UFB4-7B | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Mounting: SMD On-state resistance: 0.7Ω Type of transistor: N-MOSFET Case: X2-DFN1006-3 Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Drain-source voltage: 20V Drain current: 0.8A |
товар відсутній |