DMN2451UFB4Q-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.47 грн |
| 20000+ | 2.15 грн |
| 30000+ | 2.04 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN2451UFB4Q-7B Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V, Qualification: AEC-Q101.
Інші пропозиції DMN2451UFB4Q-7B за ціною від 2.51 грн до 15.50 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN2451UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006- Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
на замовлення 34572 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
DMN2451UFB4Q-7B | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V 24V X2-DFN1006-3 T&R 10K |
на замовлення 16417 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN2451UFB4Q-7B |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
на замовлення 34572 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 34+ | 8.95 грн |
| 100+ | 5.54 грн |
| 500+ | 3.80 грн |
| 1000+ | 3.35 грн |
| 2000+ | 2.97 грн |
| 5000+ | 2.51 грн |
| DMN2451UFB4Q-7B |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V 24V X2-DFN1006-3 T&R 10K
MOSFETs MOSFET BVDSS: 8V 24V X2-DFN1006-3 T&R 10K
на замовлення 16417 шт:
термін постачання 21-30 дні (днів)