DMN2600UFB-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.80 грн |
| 6000+ | 3.29 грн |
| 9000+ | 3.10 грн |
| 15000+ | 2.71 грн |
| 21000+ | 2.59 грн |
| 30000+ | 2.48 грн |
| 75000+ | 2.19 грн |
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Технічний опис DMN2600UFB-7 Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 540mW (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції DMN2600UFB-7 за ціною від 4.25 грн до 18.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMN2600UFB-7 | Diodes Incorporated |
Description: MOSFET N-CH 25V 1.3A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V |
на замовлення 106281 шт: термін постачання 21-31 дні (днів) |
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DMN2600UFB-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V X1-DFN1006-3 T&R 3K |
на замовлення 20203 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN2600UFB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Description: MOSFET N-CH 25V 1.3A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
на замовлення 106281 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.60 грн |
| 27+ | 11.12 грн |
| 100+ | 6.95 грн |
| 500+ | 4.81 грн |
| 1000+ | 4.25 грн |
| DMN2600UFB-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V X1-DFN1006-3 T&R 3K
MOSFETs MOSFET BVDSS: 25V-30V X1-DFN1006-3 T&R 3K
на замовлення 20203 шт:
термін постачання 21-30 дні (днів)