DMN2710UT-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
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Технічний опис DMN2710UT-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 870mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V.
Інші пропозиції DMN2710UT-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DMN2710UT-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V 24V SOT523 T&R 3K |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
DMN2710UT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523 Kind of package: 7 inch reel; tape Pulsed drain current: 5.6A Power dissipation: 0.52W Gate charge: 0.6nC Polarisation: unipolar Drain current: 0.7A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±6V Case: SOT523 On-state resistance: 0.75Ω Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| DMN2710UT-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V 24V SOT523 T&R 3K
MOSFETs MOSFET BVDSS: 8V 24V SOT523 T&R 3K
товару немає в наявності
В кошику
од. на суму грн.
| DMN2710UT-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Kind of package: 7 inch reel; tape
Pulsed drain current: 5.6A
Power dissipation: 0.52W
Gate charge: 0.6nC
Polarisation: unipolar
Drain current: 0.7A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Case: SOT523
On-state resistance: 0.75Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Kind of package: 7 inch reel; tape
Pulsed drain current: 5.6A
Power dissipation: 0.52W
Gate charge: 0.6nC
Polarisation: unipolar
Drain current: 0.7A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Case: SOT523
On-state resistance: 0.75Ω
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.