DMN2991UFZ-7B Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 14+ | 23.96 грн |
| 23+ | 14.40 грн |
| 100+ | 7.88 грн |
| 500+ | 5.84 грн |
| 1000+ | 4.57 грн |
| 2500+ | 4.43 грн |
| 5000+ | 3.80 грн |
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Технічний опис DMN2991UFZ-7B Diodes Incorporated
Description: MOSFET N-CH 20V 550MA 3DFN, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 530mW (Ta), Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 550mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: X2-DFN0606-3.
Інші пропозиції DMN2991UFZ-7B за ціною від 4.15 грн до 25.32 грн
| Фото | Назва | Виробник | Інформація |
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DMN2991UFZ-7B | Diodes Incorporated |
 Description: MOSFET N-CH 20V 550MA 3DFNInput Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: X2-DFN0606-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 530mW (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
на замовлення 5845 шт: термін постачання 21-31 дні (днів) |
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| DMN2991UFZ-7B |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 550MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: X2-DFN0606-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 550MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: X2-DFN0606-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
на замовлення 5845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.32 грн |
| 21+ | 14.63 грн |
| 100+ | 7.02 грн |
| 500+ | 5.52 грн |
| 1000+ | 4.91 грн |
| 2000+ | 4.56 грн |
| 5000+ | 4.15 грн |