DMN3007LSSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 30V 16A 8SO
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.5W
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 18.08 грн |
| 5000+ | 16.04 грн |
| 7500+ | 15.34 грн |
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Технічний опис DMN3007LSSQ-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 30V 16A 8SO, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 2.5W, Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMN3007LSSQ-13 за ціною від 17.23 грн до 86.15 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMN3007LSSQ-13 | DIODES INC. |
Description: DIODES INC. - DMN3007LSSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 5000 µohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 5000µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 2365 шт: термін постачання 21-31 дні (днів) |
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DMN3007LSSQ-13 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 30V 16A 8SO Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 2.5W Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 9125 шт: термін постачання 21-31 дні (днів) |
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DMN3007LSSQ-13 | DIODES INC. |
Description: DIODES INC. - DMN3007LSSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 5000 µohm, SOIC, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 5000µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 2365 шт: термін постачання 21-31 дні (днів) |
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DMN3007LSSQ-13 | Diodes Incorporated |
MOSFETs MOSFETBVDSS: 25V-30V |
на замовлення 4490 шт: термін постачання 21-30 дні (днів) |
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Виробник: DIODES INC.
Description: DIODES INC. - DMN3007LSSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 5000 µohm, SOIC, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.1V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 5000µohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMN3007LSSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 5000 µohm, SOIC, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.1V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 5000µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 2365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 31.10 грн |
| 500+ | 20.57 грн |
| 1000+ | 17.23 грн |
| DMN3007LSSQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 30V 16A 8SO
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.5W
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 30V 16A 8SO
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.5W
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 9125 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.79 грн |
| 10+ | 44.19 грн |
| 100+ | 28.92 грн |
| 500+ | 20.98 грн |
| 1000+ | 18.99 грн |
| DMN3007LSSQ-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMN3007LSSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 5000 µohm, SOIC, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.1V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 5000µohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMN3007LSSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 5000 µohm, SOIC, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.1V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 5000µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 2365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 75.73 грн |
| 18+ | 47.50 грн |
| 100+ | 31.10 грн |
| 500+ | 20.57 грн |
| 1000+ | 17.23 грн |
| DMN3007LSSQ-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFETBVDSS: 25V-30V
MOSFETs MOSFETBVDSS: 25V-30V
на замовлення 4490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.15 грн |
| 10+ | 47.31 грн |
| 100+ | 28.76 грн |
| 500+ | 23.56 грн |
| 1000+ | 19.41 грн |
| 2500+ | 17.79 грн |
| 10000+ | 17.37 грн |