DMN3007LSSQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CHANNEL 30V 16A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V
на замовлення 2374 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.5 грн |
| 10+ | 37.9 грн |
| 100+ | 26.22 грн |
| 500+ | 20.56 грн |
| 1000+ | 17.5 грн |
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Технічний опис DMN3007LSSQ-13 Diodes Incorporated
Description: MOSFET N-CHANNEL 30V 16A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Power Dissipation (Max): 2.5W, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V.
Інші пропозиції DMN3007LSSQ-13 за ціною від 14.49 грн до 48.52 грн
| Фото | Назва | Виробник | Інформація |
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DMN3007LSSQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFETBVDSS: 25V-30V |
на замовлення 2209 шт: термін постачання 21-30 дні (днів) |
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DMN3007LSSQ-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 30V 16A Automotive 8-Pin SO T/R |
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DMN3007LSSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 64A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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DMN3007LSSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CHANNEL 30V 16A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 2.5W Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V |
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DMN3007LSSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 64A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 64.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |