DMN3008SCP10-7 Diodes Incorporated

Description: MOSFET BVDSS: 25V 30V X4-DSN3415, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V, Power Dissipation (Max): 2.7W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 15 V.