DMN3008SFGQ-7 Diodes Incorporated

Description: MOSFET N-CH 30V PWRDI3333, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).