DMN3009SFGQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 16A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2000+ | 31.59 грн |
| 4000+ | 30.16 грн |
| 6000+ | 29.71 грн |
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Технічний опис DMN3009SFGQ-7 Diodes Incorporated
Description: MOSFET N-CH 30V 16A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMN3009SFGQ-7 за ціною від 25.53 грн до 106.02 грн
| Фото | Назва | Виробник | Інформація |
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DMN3009SFGQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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DMN3009SFGQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 16A PWRDI3333 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 34695 шт: термін постачання 21-31 дні (днів) |
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| DMN3009SFGQ-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
MOSFETs MOSFET BVDSS: 25V-30V
на замовлення 429 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 95.17 грн |
| 10+ | 61.63 грн |
| 100+ | 38.68 грн |
| 500+ | 31.01 грн |
| 1000+ | 28.27 грн |
| 2000+ | 25.53 грн |
| DMN3009SFGQ-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 16A PWRDI3333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 16A PWRDI3333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 34695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 106.02 грн |
| 10+ | 66.74 грн |
| 100+ | 45.45 грн |
| 500+ | 34.07 грн |
| 1000+ | 31.07 грн |