DMN3010LFG-13 Diodes Incorporated
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 49.36 грн |
| 10+ | 41.24 грн |
| 100+ | 26.77 грн |
| 500+ | 21.08 грн |
| 1000+ | 16.30 грн |
| 3000+ | 13.57 грн |
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Технічний опис DMN3010LFG-13 Diodes Incorporated
Description: MOSFET N-CH 30V 11A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V.
Інші пропозиції DMN3010LFG-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN3010LFG-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Polarisation: unipolar Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 90A Drain current: 11A Drain-source voltage: 30V Gate charge: 37nC On-state resistance: 10.5mΩ Power dissipation: 2.4W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape кількість в упаковці: 3000 шт |
товару немає в наявності |
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DMN3010LFG-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 11A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V |
товару немає в наявності |
|
| DMN3010LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W Polarisation: unipolar Case: PowerDI3333-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Pulsed drain current: 90A Drain current: 11A Drain-source voltage: 30V Gate charge: 37nC On-state resistance: 10.5mΩ Power dissipation: 2.4W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
товару немає в наявності |