DMN3010LFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 2000+ | 14.62 грн |
| 6000+ | 13.37 грн |
| 10000+ | 12.41 грн |
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Технічний опис DMN3010LFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 11A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V.
Інші пропозиції DMN3010LFG-7 за ціною від 10.62 грн до 43.07 грн
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DMN3010LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 11A PWRDI3333 Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 23246 шт: термін постачання 21-31 дні (днів) |
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DMN3010LFG-7 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss |
на замовлення 5518 шт: термін постачання 21-30 дні (днів) |
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| DMN3010LFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 11A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 23246 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.72 грн |
| 10+ | 35.73 грн |
| 100+ | 24.82 грн |
| 500+ | 18.19 грн |
| 1000+ | 14.78 грн |
| DMN3010LFG-7 |
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Виробник: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss
MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss
на замовлення 5518 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.07 грн |
| 10+ | 32.35 грн |
| 100+ | 19.27 грн |
| 500+ | 16.53 грн |
| 1000+ | 14.91 грн |
| 2000+ | 10.62 грн |