DMN3012LDG-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 10A PWRDI3333, Part Status: Obsolete, Supplier Device Package: PowerDI3333-8 (Type D), Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 2.2W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).