DMN3012LEG-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A PWRDI3333
Supplier Device Package: PowerDI3333-8 (Type D)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.2W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
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Технічний опис DMN3012LEG-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A PWRDI3333, Supplier Device Package: PowerDI3333-8 (Type D), Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 2.2W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN3012LEG-13 за ціною від 44.82 грн до 156.65 грн
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DMN3012LEG-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A PWRDI3333 Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 2.2W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) Supplier Device Package: PowerDI3333-8 (Type D) |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
| DMN3012LEG-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A PWRDI3333
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.2W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Supplier Device Package: PowerDI3333-8 (Type D)
Description: MOSFET 2N-CH 30V 10A PWRDI3333
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.2W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Supplier Device Package: PowerDI3333-8 (Type D)
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 156.65 грн |
| 10+ | 96.45 грн |
| 100+ | 65.34 грн |
| 500+ | 48.84 грн |
| 1000+ | 44.82 грн |