DMN3013LDG-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 9.5A PWRDI3333, Drain to Source Voltage (Vdss): 30V, Power - Max: 2.16W (Ta), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc), Supplier Device Package: PowerDI3333-8 (Type D), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).