Технічний опис DMN3013LDG-7 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W, Case: PowerDI3333-8, Mounting: SMD, Kind of package: 7 inch reel; tape, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 5.7nC, On-state resistance: 17.7mΩ, Drain current: 7.6A, Power dissipation: 1.25W, Gate-source voltage: ±10V, Drain-source voltage: 30V, Pulsed drain current: 80A, Kind of channel: enhancement.
Інші пропозиції DMN3013LDG-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN3013LDG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 17.7mΩ Drain current: 7.6A Power dissipation: 1.25W Gate-source voltage: ±10V Drain-source voltage: 30V Pulsed drain current: 80A Kind of channel: enhancement |
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