DMN3016LK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12.4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 14.67 грн |
| 5000+ | 12.95 грн |
| 7500+ | 12.35 грн |
| 12500+ | 10.95 грн |
| 17500+ | 10.58 грн |
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Технічний опис DMN3016LK3-13 Diodes Incorporated
Description: MOSFET N-CH 30V 12.4A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції DMN3016LK3-13 за ціною від 10.90 грн до 60.13 грн
| Фото | Назва | Виробник | Інформація |
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DMN3016LK3-13 | Diodes Incorporated |
MOSFETs 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC |
на замовлення 3266 шт: термін постачання 21-30 дні (днів) |
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DMN3016LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12.4A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
на замовлення 26163 шт: термін постачання 21-31 дні (днів) |
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| DMN3016LK3-13 |
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Виробник: Diodes Incorporated
MOSFETs 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC
MOSFETs 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC
на замовлення 3266 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.79 грн |
| 10+ | 35.91 грн |
| 100+ | 20.54 грн |
| 500+ | 15.68 грн |
| 1000+ | 14.07 грн |
| 2500+ | 11.46 грн |
| 5000+ | 10.90 грн |
| DMN3016LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Description: MOSFET N-CH 30V 12.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
на замовлення 26163 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.13 грн |
| 10+ | 35.88 грн |
| 100+ | 23.25 грн |
| 500+ | 16.70 грн |
| 1000+ | 15.05 грн |