DMN3018SSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N CH 30V 7.3A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 8.80 грн |
| 5000+ | 7.70 грн |
| 7500+ | 7.30 грн |
| 12500+ | 6.43 грн |
| 17500+ | 6.19 грн |
| 25000+ | 5.95 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN3018SSS-13 Diodes Incorporated
Description: MOSFET N CH 30V 7.3A 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V.
Інші пропозиції DMN3018SSS-13 за ціною від 8.21 грн до 37.97 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN3018SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 60A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 2200 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
|
DMN3018SSS-13 | Diodes Incorporated |
Description: MOSFET N CH 30V 7.3A 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V |
на замовлення 74368 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
DMN3018SSS-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K |
на замовлення 3615 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMN3018SSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 60A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 60A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.61 грн |
| 19+ | 22.88 грн |
| 100+ | 13.43 грн |
| 500+ | 9.45 грн |
| 1000+ | 8.21 грн |
| DMN3018SSS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N CH 30V 7.3A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
Description: MOSFET N CH 30V 7.3A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
на замовлення 74368 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.97 грн |
| 14+ | 22.68 грн |
| 100+ | 14.45 грн |
| 500+ | 10.21 грн |
| 1000+ | 9.13 грн |
| DMN3018SSS-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
на замовлення 3615 шт:
термін постачання 21-30 дні (днів)