DMN3022LDG-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 7.6A PWRDI3333, Supplier Device Package: PowerDI3333-8 (Type D), Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.96W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).