DMN3024LK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9.78A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
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Технічний опис DMN3024LK3-13 Diodes Incorporated
Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 14.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 4.1W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.024ohm, SVHC: Lead (27-Jun-2024).
Інші пропозиції DMN3024LK3-13 за ціною від 13.93 грн до 59.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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DMN3024LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 9.78A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Power Dissipation (Max): 2.17W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V |
на замовлення 4850 шт: термін постачання 21-31 дні (днів) |
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DMN3024LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.78A; Idm: 46.5A; 2.17W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.78A Pulsed drain current: 46.5A Power dissipation: 2.17W Case: TO252 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 12.9nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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DMN3024LK3-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET 30V N-CHANNEL |
на замовлення 3207 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3024LK3-13 | DIODES INC. |
Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 14.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 4.1W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.024ohm SVHC: Lead (27-Jun-2024) |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3024LK3-13 | DIODES INC. |
Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 14.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 4.1W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.024ohm SVHC: Lead (27-Jun-2024) |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| DMN3024LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9.78A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
Description: MOSFET N-CH 30V 9.78A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.17W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.79 грн |
| 10+ | 33.58 грн |
| 100+ | 21.74 грн |
| 500+ | 15.61 грн |
| 1000+ | 14.07 грн |
| DMN3024LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.78A; Idm: 46.5A; 2.17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.78A
Pulsed drain current: 46.5A
Power dissipation: 2.17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 12.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.78A; Idm: 46.5A; 2.17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.78A
Pulsed drain current: 46.5A
Power dissipation: 2.17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 12.9nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.82 грн |
| 14+ | 31.76 грн |
| 100+ | 21.56 грн |
| 125+ | 20.81 грн |
| 500+ | 17.00 грн |
| 650+ | 16.42 грн |
| 1000+ | 15.50 грн |
| 2500+ | 13.93 грн |
| DMN3024LK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET 30V N-CHANNEL
MOSFETs ENHANCE MODE MOSFET 30V N-CHANNEL
на замовлення 3207 шт:
термін постачання 21-30 дні (днів)
| DMN3024LK3-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 14.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 4.1W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.024ohm
SVHC: Lead (27-Jun-2024)
Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 14.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 4.1W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.024ohm
SVHC: Lead (27-Jun-2024)
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
| DMN3024LK3-13 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 14.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 4.1W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.024ohm
SVHC: Lead (27-Jun-2024)
Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 14.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 4.1W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.024ohm
SVHC: Lead (27-Jun-2024)
на замовлення 226 шт:
термін постачання 21-31 дні (днів)