DMN3024LSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
| Кількість | Ціна |
|---|---|
| 2500+ | 20.57 грн |
| 5000+ | 18.27 грн |
| 7500+ | 17.48 грн |
| 12500+ | 15.58 грн |
| 17500+ | 15.09 грн |
| 25000+ | 14.61 грн |
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Технічний опис DMN3024LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.8A, Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Інші пропозиції DMN3024LSD-13 за ціною від 11.35 грн до 80.22 грн
| Фото | Назва | Виробник | Інформація |
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DMN3024LSD-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar On-state resistance: 36mΩ Power dissipation: 1.3W Drain current: 5.8A Gate-source voltage: ±20V Drain-source voltage: 30V Kind of package: 13 inch reel; tape |
на замовлення 568 шт: термін постачання 14-30 дні (днів) |
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DMN3024LSD-13 | Виробник : Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET 30V DUAL N-CHANNEL |
на замовлення 44461 шт: термін постачання 21-30 дні (днів) |
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DMN3024LSD-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
на замовлення 35464 шт: термін постачання 21-31 дні (днів) |
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