DMN3025LFDF-7 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 8+ | 44.81 грн |
| 12+ | 27.46 грн |
| 100+ | 13.69 грн |
| 500+ | 11.59 грн |
| 1000+ | 10.40 грн |
| 3000+ | 8.45 грн |
| 6000+ | 7.82 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN3025LFDF-7 Diodes Incorporated
Description: MOSFET N-CH 30V 9.9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V.
Інші пропозиції DMN3025LFDF-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMN3025LFDF-7 | Виробник : Diodes Incorporated |
 Description: MOSFET N-CH 30V 9.9A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V |
на замовлення 177000 шт: термін постачання 21-31 дні (днів) |
|
|
|
DMN3025LFDF-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 9.9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V |
на замовлення 179882 шт: термін постачання 21-31 дні (днів) |