Технічний опис DMN3025LFG-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W, Polarisation: unipolar, Pulsed drain current: 60A, Drain current: 7.8A, Drain-source voltage: 30V, Gate-source voltage: ±20V, Gate charge: 11.6nC, On-state resistance: 28mΩ, Kind of package: 13 inch reel; tape, Power dissipation: 1.3W, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: PowerDI3333-8, Mounting: SMD.
Інші пропозиції DMN3025LFG-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN3025LFG-13 | Виробник : Diodes Incorporated |
 MOSFET 30V N-CH MOSFET |
товару немає в наявності |
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| DMN3025LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W Polarisation: unipolar Pulsed drain current: 60A Drain current: 7.8A Drain-source voltage: 30V Gate-source voltage: ±20V Gate charge: 11.6nC On-state resistance: 28mΩ Kind of package: 13 inch reel; tape Power dissipation: 1.3W Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerDI3333-8 Mounting: SMD |
товару немає в наявності |