Технічний опис DMN3025LFG-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W, Polarisation: unipolar, Pulsed drain current: 60A, Drain current: 7.8A, Drain-source voltage: 30V, Gate-source voltage: ±20V, Gate charge: 11.6nC, On-state resistance: 28mΩ, Kind of package: 13 inch reel; tape, Power dissipation: 1.3W, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: PowerDI3333-8, Mounting: SMD.
Інші пропозиції DMN3025LFG-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN3025LFG-13 | Diodes Incorporated |
 MOSFET 30V N-CH MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMN3025LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W Polarisation: unipolar Pulsed drain current: 60A Drain current: 7.8A Drain-source voltage: 30V Gate-source voltage: ±20V Gate charge: 11.6nC On-state resistance: 28mΩ Kind of package: 13 inch reel; tape Power dissipation: 1.3W Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerDI3333-8 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN3025LFG-13 |
|
Виробник: Diodes Incorporated
MOSFET 30V N-CH MOSFET
MOSFET 30V N-CH MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| DMN3025LFG-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 7.8A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Gate charge: 11.6nC
On-state resistance: 28mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 1.3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 7.8A
Drain-source voltage: 30V
Gate-source voltage: ±20V
Gate charge: 11.6nC
On-state resistance: 28mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 1.3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerDI3333-8
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.