DMN3025LFV-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 25A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.91 грн |
| 6000+ | 7.82 грн |
| 9000+ | 7.44 грн |
| 15000+ | 6.57 грн |
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Технічний опис DMN3025LFV-13 Diodes Incorporated
Description: MOSFET N-CH 30V 25A POWERDI3333, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8 (Type UX), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN3025LFV-13 за ціною від 7.26 грн до 40.85 грн
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DMN3025LFV-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
на замовлення 2655 шт: термін постачання 21-30 дні (днів) |
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DMN3025LFV-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 25A POWERDI3333 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V Part Status: Active Supplier Device Package: PowerDI3333-8 (Type UX) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 20837 шт: термін постачання 21-31 дні (днів) |
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