DMN3025LFV-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 25A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2000+ | 8.88 грн |
| 6000+ | 8.20 грн |
| 10000+ | 7.38 грн |
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Технічний опис DMN3025LFV-7 Diodes Incorporated
Description: MOSFET N-CH 30V 25A POWERDI3333, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI3333-8 (Type UX), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMN3025LFV-7 за ціною від 8.72 грн до 33.23 грн
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DMN3025LFV-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 25A POWERDI3333 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI3333-8 (Type UX) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
|
| DMN3025LFV-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 25A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 25A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.23 грн |
| 13+ | 24.61 грн |
| 100+ | 14.75 грн |
| 500+ | 12.82 грн |
| 1000+ | 8.72 грн |