DMN3026LVT-7 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 11+ | 30.28 грн |
| 16+ | 21.19 грн |
| 100+ | 12.17 грн |
| 500+ | 9.78 грн |
| 1000+ | 8.65 грн |
| 3000+ | 6.12 грн |
| 6000+ | 5.98 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN3026LVT-7 Diodes Incorporated
Description: MOSFET N-CH 30V 6.6A TSOT26, Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TSOT-23-6, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції DMN3026LVT-7 за ціною від 8.45 грн до 35.60 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN3026LVT-7 | Diodes Incorporated |
 Description: MOSFET N-CH 30V 6.6A TSOT26Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TSOT-23-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.2W (Ta) |
на замовлення 3489 шт: термін постачання 21-31 дні (днів) |
|
| DMN3026LVT-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 6.6A TSOT26
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-23-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Description: MOSFET N-CH 30V 6.6A TSOT26
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-23-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
на замовлення 3489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 21.10 грн |
| 100+ | 13.41 грн |
| 500+ | 9.46 грн |
| 1000+ | 8.45 грн |