DMN3030LSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V
на замовлення 1434 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
9+ | 32.33 грн |
11+ | 26.64 грн |
100+ | 18.5 грн |
500+ | 13.56 грн |
1000+ | 11.02 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN3030LSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V.
Інші пропозиції DMN3030LSS-13 за ціною від 10.3 грн до 35.34 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMN3030LSS-13 | Виробник : Diodes Incorporated | MOSFET NMOS SINGLE N-CHANNL 30V 9A |
на замовлення 4668 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
DMN3030LSS-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 30V 9A 8-Pin SO T/R |
товар відсутній |
||||||||||||||||||
DMN3030LSS-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 30V 9A 8-Pin SO T/R |
товар відсутній |
||||||||||||||||||
DMN3030LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.75A; Idm: 40A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.75A Pulsed drain current: 40A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
DMN3030LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 741 pF @ 15 V |
товар відсутній |
||||||||||||||||||
DMN3030LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.75A; Idm: 40A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.75A Pulsed drain current: 40A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |