DMN3055LFDBQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 810mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис DMN3055LFDBQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 810mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN3055LFDBQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMN3055LFDBQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K |
товару немає в наявності |